ALD110900A Просмотр технического описания (PDF) - Advanced Linear Devices

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ALD110900A

QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY

Advanced Linear Devices 

TYPICAL PERFORMANCE CHARACTERISTICS (cont.)

DRAIN - GATE DIODE CONNECTED VOLTAGE

TEMPCO vs. DRAIN SOURCE ON CURRENT

5

-55°C ≤ TA ≤ +125°C

2.5

0

-2.5

-5

1

10

100

1000

DRAIN SOURCE ON CURRENT (µA)

ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC

0.6

VGS(TH)=-3.5V

0.5

VGS(TH)=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V

0.3

0.2

0.0

0.1

0.2

0.5

1.0

2.0

5.0

DRAIN-SOURCE ON VOLTAGE (V)

TRANCONDUCTANCE vs. DRAIN-SOURCE

ON CURRENT

1.2

TA = 25°C

VDS = +10V

0.9

TRANSFER CHARACTERISTICS

1.6

TA = 25°C

VDS = +10V

VGS(TH) = -3.5V

1.2

VGS(TH) = -1.3V

VGS(TH) = -0.4V

VGS(TH) = 0.0V

0.8

VGS(TH) = +0.2V

0.4

VGS(TH) = +1.4V

VGS(TH) = +0.8V

0.0

-4 -2

0

2

4

6

8 10

GATE-SOURCE VOLTAGE (V)

SUBTHRESHOLD CHARACTERISTICS

2.5

2.0

1.5

1.0

25°C

0.5

VGS(th) = 0.4V

0.0

55°C VGS(th) = 0.2V

-0.5

100000 10000 1000 100

10

1

0.1

DRAIN -SOURCE CURRENT (nA)

THRESHOLD VOLTAGE vs.

AMBIENT TEMPERATURE

4.0

VDS = +0.1V ID = 1.0µA

3.0

0.6

0.3

0.0

0

0.3

0.2

2

4

6

8

10

DRAIN -SOURCE ON CURRENT(mA)

NORMALIZED SUBTHRESHOLD

CHARACTERISTICS RELATIVE

GATE THRESHOLD VOLTAGE

VD = 0.1V

0.1

0

-0.1

-0.2

55°C

-0.3

25°C

-0.4

10000 1000

100

10

1

0.1

DRAIN-SOURCE CURRENT (nA)

ALD110800/ALD110800A/ALD110900/ALD110900A

2.0

1.0

Vt = 0.0V

Vt = 0.2V

0

-50 -25 0 25 50

Vt = 1.4V

Vt = 0.8V

Vt = 0.4V

75 100 125

AMBIENT TEMPERATURE (°C)

THRESHOLD VOLTAGES

vs. AMBIENT TEMPERATURES

2.0

IDS = +1µA

VDS = +0.1V

1.0

VGS(th) = 0.0V

0.0

-1.0

-2.0

VGS(th) = -0.4V

VGS(th) = -1.3V

-3.0

-4.0

-25

Advanced Linear Devices

VGS(th) = -3.5V

25

75

AMBIENT TEMPERATURE (OC)

125

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