DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AD8047A(1995) Просмотр технического описания (PDF) - Analog Devices

Номер в каталоге
Компоненты Описание
производитель
AD8047A
(Rev.:1995)
ADI
Analog Devices ADI
AD8047A Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AD8047/AD8048
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing × Bandwidth Product (AD8047) . . . 180 V – MHz
(AD8048) . . . 250 V– MHz
Internal Power Dissipation2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Pin Plastic DIP Package: θJA = 90°C/Watt
8-Pin SOIC Package: θJA = 140°C/Watt
METALIZATION PHOTOS
Dimensions shown in inches and (mm).
Connect Substrate to –VS.
AD8047
+VS
0.045
(1.14)
VOUT
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these de-
vices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Exceeding this limit tem-
porarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175°C for an extended period can
result in device failure.
While the AD8047 and AD8048 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to ob-
serve the maximum power derating curves.
2.0
8-PIN MINI-DIP PACKAGE
TJ = +150°C
1.5
1.0
8-PIN SOIC PACKAGE
0.5
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE – °C
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
–IN
+IN
–VS
0.044
(1.13)
AD8048
+VS
0.045
–OUT (1.14)
ORDERING GUIDE
Model
AD8047AN
AD8047AR
AD8047-EB
AD8048AN
AD8048AR
AD8048-EB
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Package
Description Option*
Plastic DIP N-8
SOIC
R-8
Evaluation
Board
Plastic DIP N-8
SOIC
R-8
Evaluation
Board
*N = Plastic DIP; R= SOIC (Small Outline Integrated Circuit)
–IN
+IN
–VS
0.044
(1.13)
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. 0
–3–

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]