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ADM211EARZ

EMI/EMC-Compliant, ±15 kV ESD­ Protected, RS-232 Line Drivers/Receivers

Analog Devices 

ADM206E/ADM207E/ADM208E/ADM211E/ADM213E

destruction can occur immediately because of arcing or heating.

Even if catastrophic failure does not occur immediately, the

device can suffer from parametric degradation that can result in

degraded performance. The cumulative effects of continuous

exposure can eventually lead to complete failure.

I/O lines are particularly vulnerable to ESD damage. Simply

touching or plugging in an I/O cable can result in a static

discharge that can damage or destroy the interface product

connected to the I/O port. Traditional ESD test methods, such

as the MIL-STD-883B method 3015.7, do not fully test product

susceptibility to this type of discharge. This test was intended to

test product susceptibility to ESD damage during handling.

Each pin is tested with respect to all other pins.

There are some important differences between the traditional

test and the IEC test:

• The IEC test is much more stringent in terms of discharge

energy. The peak current injected is over four times greater.

• The current rise time is significantly faster in the IEC test.

• The IEC test is carried out while power is applied to

the device.

It is possible that the ESD discharge could induce latch-up in

the device being tested. This test, therefore, is more represent-

tative of a real-world I/O discharge, where the equipment is

operating normally with power applied. However, both tests

should be performed to ensure maximum protection both

during handling and later during field service.

HIGH

VOLTAGE

GENERATOR

R1

C1

R2

DEVICE

UNDER TEST

ESD TEST METHOD

H. BODY MIL-STD-883B

IEC 1000-4-2

R2

1.5kΩ

330Ω

C1

100pF

150pF

Figure 26. ESD Test Standards

100

90

36.8

10

tRL

tDL

TIME t

Figure 27. Human Body Model ESD Current Waveform

100

90

10

0.1ns TO 1ns

30ns

60ns

TIME t

Figure 28. IEC 1000-4-2 ESD Current Waveform

ADM2xxE products are tested using both of the previously

mentioned test methods. Pins are tested with respect to all other

pins as per the MIL-STD-883B specification. In addition, all I/O

pins are tested per the IEC test specification. The products are

tested under the following conditions:

• Power on (normal operation).

• Power on (shutdown mode).

• Power off.

There are four levels of compliance defined by IEC 1000-4-2.

ADM2xxE products meet the most stringent compliance level

both for contact and for air-gap discharge. This means that the

products are able to withstand contact discharges in excess of

8 kV and air-gap discharges in excess of 15 kV.

Table 7. IEC 1000-4-2 Compliance Levels

Level Contact Discharge (kV) Air-Gap Discharge (kV)

1

2

2

2

4

4

3

6

8

4

8

15

Table 8. ADM2xxE ESD Test Results

ESD Test Method

I/O Pin (kV)

MIL-STD-883B

±15

IEC 1000-4-2

Contact

±8

Air-Gap

±15

EFT/BURST TESTING (IEC 1000-4-4)

IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst

immunity. Electrical fast transients occur because of arcing

contacts in switches and relays. The tests simulate the

interference generated when, for example, a power relay

disconnects an inductive load. A spark is generated due to the

well-known back EMF effect. In fact, the spark consists of a

Rev. E | Page 12 of 20

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