HGTP12N60C3D Просмотр технического описания (PDF) - Intersil
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HGTP12N60C3D Datasheet PDF : 7 Pages
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HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = PD x ZθJC x RθJC + TC
t2
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
50
40
30
100oC
20
150oC
10
25oC
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VEC, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
35
TC = 25oC, dIEC/dt = 200A/ms
30
trr
25
20
ta
15
10
tb
5
0
0
5
10
15
20
IEC, FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveform
HGTP12N60C3D
RG = 25Ω
L = 100µH
+
VDD = 480V
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
10%
EOFF EON
90%
10%
td(OFF)I tfi
tri
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
6
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