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AD5116 Просмотр технического описания (PDF) - Analog Devices

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AD5116 Datasheet PDF : 16 Pages
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Data Sheet
AD5116
INTERFACE TIMING SPECIFICATIONS
VDD = 2.3 V to 5.5 V; all specifications TMIN to TMAX, unless otherwise noted.
Table 3.
Parameter
t1
t2
t3
t4
t5
t1
EEPROM_PROGRAM
t2
POWER_UP
Test Conditions/Comments
ASE = 0 V, PD = GND, PU = GND
ASE = VDD
Min Typ Max Unit Description
8
ms
Debounce time
1
sec
Manual to auto scan time
140
ms
Auto scan step
1
sec
Auto save execute time
8
ms
Low pulse time to manual storage
15 50
ms
Memory program time
50
µs
Power-on EEPROM restore time
1 EEPROM program time depends on the temperature and EEPROM write cycles. Higher timing is expected at a lower temperature and higher write cycles.
2 Maximum time after VDD is equal to 2.3 V.
TIMING DIAGRAMS
t1
PU
PD (LOW)
RW
PD/PU (LOW)
ASE
EEPROM
t5
tEEPROM
PROGRAM
DATA
NEW DATA
Figure 2. Manual Increment Mode Timing
Figure 5. Manual Save Mode Timing
t1
PU
PD (LOW)
RW
t3
t2
Figure 3. Auto Increment Mode Timing
t1
PD
t4
tEEPROM
PROGRAM
RW
ASE (LOW)
EEPROM
DATA
NEW DATA
Figure 4. Auto Save Mode Timing
t1
PD
RW = 45Ÿ
RW
ASE
Figure 6. End Scale Indication Timing
Rev. B | Page 5 of 16

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