76129D Просмотр технического описания (PDF) - Fairchild Semiconductor
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76129D Datasheet PDF : 11 Pages
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HUF76129D3, HUF76129D3S
Typical Performance Curves (Continued)
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
45
30
25oC
-55oC
150oC
15
VDD = 15V
0
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
60
VGS = 10V PULSE DURATION = 80µs
VGS = 5V
DUTY CYCLE = 0.5% MAX
VGS = 4.5V
45
VGS = 4V
VGS = 3.5V
30
VGS = 3V
15
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
30
27
24
ID = 5A
21
ID = 20A
ID = 10A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
18
15
12
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.6 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 20A
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
1.15
ID = 250µA
1.10
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
HUF76129D3, HUF76129D3S Rev. B1
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