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74V1G79CTR(2004) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
74V1G79CTR
(Rev.:2004)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
74V1G79CTR Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
74V1G79
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10
10
10 pF
CPD Power Dissipation
Capacitance
8
pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
TEST CIRCUIT
CL = 15/50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50)
4/10

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