GS8180Q18D-100 Просмотр технического описания (PDF) - Giga Semiconductor

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производитель

GS8180Q18D-100

18Mb Burst of 2 SigmaQuad SRAM

Giga Semiconductor 

GS8180Q18/36D-200/167/133/100*

AC Electrical Characteristics

Parameter

Symbol

-200

-167

Min Max Min Max

K, K Clock High to Data Output Valid

C, C Clock High to Data Output Valid

tKHQV

tCHQV

— 2.2 — 2.5

K, K Clock High to Data Output Hold

C, C Clock High to Data Output Hold

tKHQX

tCHQX

1.0 — 1.2 —

K Clock High to Data Output Low-Z

C Clock High to Data Output Low-Z

tKHQX1

tCHQX1

1.0 — 1.2 —

K Clock High to Data Output High-Z

C Clock High to Data Output High-Z

tKHQZ

tCHQZ

— 2.2 — 2.5

Notes:

1. These parameters apply to control inputs R and W.

2. These parameters are guaranteed by design and characterization. Not 100% tested.

3. These parameters are measured at ±50mV from steady state voltage.

4. tKHKH Max is specified by tKHKH Min. tCHCH Max is specified by tCHCH Min.

-133

Min Max

— 3.0

1.2 —

1.2 —

— 3.0

-100

Min Max

— 3.0

1.2 —

1.2 —

— 3.0

Units Notes

ns

ns

2

ns 2,3

ns 2,3

Rev: 2.03 10/2004

18/32

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2002, GSI Technology

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