GS8180Q18D Просмотр технического описания (PDF) - Giga Semiconductor

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GS8180Q18D

18Mb Burst of 2 SigmaQuad SRAM

Giga Semiconductor 

GS8180Q18/36D-200/167/133/100*

Input and Output Leakage Characteristics

Parameter

Input Leakage Current

(except mode pins)

Symbol

IIL

Output Leakage Current

IOL

Test Conditions

VIN = 0 to VDD

Output Disable,

VOUT = 0 to VDDQ

Min.

–2 uA

–2 uA

Max Notes

2 uA

2 uA

Programmable Impedance HSTL Output Driver DC Electrical Characteristics

Parameter

Symbol

Min.

Output High Voltage

VOH1

VDDQ/2

Output Low Voltage

VOL1

Vss

Output High Voltage

VOH2

VDDQ – 0.2

Output Low Voltage

VOL2

Vss

Notes:

1. IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).

2. IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).

3. Parameter tested with RQ = 250Ω and VDDQ = 1.5 V or 1.8 V

4. Minimum Impedance mode, ZQ = VSS

5. IOH = –1.0 mA

6. IOL = 1.0 mA

Max.

VDDQ

VDDQ/2

VDDQ

0.2

Units Notes

V

1, 3

V

2, 3

V

4, 5

V

4, 6

Rev: 2.03 10/2004

16/32

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2002, GSI Technology

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