GS8180Q18D-167(2002) Просмотр технического описания (PDF) - Giga Semiconductor

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Компоненты Описание

производитель

GS8180Q18D-167
(Rev.:2002)

18Mb Σ2x2B2 SigmaQuad SRAM

Giga Semiconductor 

Preliminary

GS8180Q18/36D-200/167/133

AC Test Load Diagram

DQ

RQ = 250 Ω (HSTL I/O)

50Ω

VT = VDDQ/2

Input and Output Leakage Characteristics

Parameter

Input Leakage Current

(except mode pins)

Symbol

IIL

Mode Pin Input Current

IINM

Output Leakage Current

IOL

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIL

0 V ≤ VIN ≤ VIL

Output Disable,

VOUT = 0 to VDDQ

Min.

–2 uA

–100 uA

–2 uA

–2 uA

Max Notes

2 uA

2 uA

2 uA

2 uA

Programmable Impedance HSTL Output Driver DC Electrical Characteristics

Parameter

Symbol

Min.

Output High Voltage

VOH

VDDQ / 2

Output Low Voltage

VOL

Vss

Notes:

1. IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 150Ω ≤ RQ ≤ 300Ω).

2. IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 150Ω ≤ RQ ≤ 300Ω).

3. Parameter tested with RQ = 250Ω and VDDQ = 1.5 V or 1.8 V

Max.

VDDQ

VDDQ / 2

Units Notes

V

1,3

V

2,3

Rev: 2.00f 6/2002

17/29

© 2002, Giga Semiconductor, Inc.

Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.

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