GS8180Q18D(2002) Просмотр технического описания (PDF) - Giga Semiconductor

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производитель

GS8180Q18D
(Rev.:2002)

18Mb Σ2x2B2 SigmaQuad SRAM

Giga Semiconductor 

Preliminary

GS8180Q18/36D-200/167/133

HSTL I/O DC Input Characteristics

Parameter

Symbol

DC Input Logic High

VIH (dc)

DC Input Logic Low

VIL (dc)

VREF DC Voltage

VREF (dc)

Notes:

1. Compatible with both 1.8 V and 1.5 V I/O drivers

Min

VREF + 200

VDDQ (min)/2

Max

VREF – 200

VDDQ (max)/2

Units

mV

mV

V

Notes

1

1

1

HSTL I/O AC Input Characteristics

Parameter

Symbol

Min

Max

Units Notes

AC Input Logic High

VIH (ac)

VREF + 400

mV

3,4

AC Input Logic Low

VIL (ac)

VREF – 400

mV

3,4

VREF Peak to Peak AC Voltage

VREF (ac)

5% VREF (DC)

mV

1

Notes:

1. The peak to peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF.

2. To guarantee AC characteristics, VIH,VIL, Trise, and Tfall of inputs and clocks must be within 10% of each other.

3. For devices supplied with HSTL I/O input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.

4. See AC Input Definition drawing below.

HSTL I/O AC Input Definitions

VIH (ac)

VREF

VIL (ac)

Rev: 2.00f 6/2002

15/29

© 2002, Giga Semiconductor, Inc.

Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.

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