AM28F010A-120FC Просмотр технического описания (PDF) - Advanced Micro Devices
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AM28F010A-120FC
Advanced Micro Devices
AM28F010A-120FC Datasheet PDF : 35 Pages
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AC Characteristics—Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter Symbols
Am28F010A Speed Options
JEDEC Standard Description
-70 -90 -120 -150 -200 Unit
tAVAV
tWC
tAVEL
tAS
tELAX
tAH
tDVEH tDS
tEHDX tDH
tOEH
Write Cycle Time (Note 4)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Hold Time for Embedded
Algorithm only
Min 70
Min
0
Min 45
Min 45
Min 10
Min 10
90 120 150 200 ns
0
0
0
0
ns
45 50 60 75 ns
45 50 50 50 ns
10 10 10 10 ns
10 10 10 10 ns
tGHEL
tWLEL
tEHWK
tELEH
tEHEL
tEHEH3
tEHEH4
tVPEL
tVCS
tVPPR
tVPPF
tLKO
tWS
tWH
tCP
tCPH
Read Recovery Time Before Write
Min
0
0
0
0
0
ns
WE# Setup Time by CE#
Min
0
0
0
0
0
ns
CE# Hold Time
Min
0
0
0
0
0
ns
Write Pulse Width
Min 65 65 70 80 80 ns
Write Pulse Width High
Min 20 20 20 20 20 ns
Embedded Program Operation (Note 2)
Min 14 14 14 14 14 µs
Embedded Erase Operation (Note 2)
Typ
5
5
5
5
5 sec
VPP Setup Time to Chip Enable Low (Note 3) Min 100 100 100 100 100 ns
VCC Setup Time (Note 3)
Min 50 50 50 50 50 µs
VPP Rise Time (Note 3) 90% VPPH
Min 500 500 500 500 500 ns
VPP Fall Time (Note 3) 90% VPPL
Min 500 500 500 500 500 ns
VCC < VLKO to Reset (Note 3)
Min 100 100 100 100 100 ns
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Embedded Program Operation of 14 µs consists of 10 µs program pulse and 4 µs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Am28F010A
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