AM28F010A-150PEB Просмотр технического описания (PDF) - Advanced Micro Devices

Номер в каталоге

Компоненты Описание

производитель

AM28F010A-150PEB

1 megabit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms

Advanced Micro Devices 

25

20

15

10

55°C

0°C

25°C

5

70°C

125°C

0

0

1

2

3

4

5

6

7

8

9

10

11

12

Frequency in MHz

Figure 7. Am28F010A—Average ICC Active vs. Frequency

VCC = 5.5 V, Addressing Pattern = Minmax

Data Pattern = Checkerboard

16778D-15

TEST CONDITIONS

5.0 V

Device

Under

Test

CL

6.2 kΩ

2.7 kΩ

Note: Diodes are IN3064 or equivalent

Figure 8. Test Setup

16778D-16

Table 6. Test Specifications

Test Condition

-70 All others Unit

Output Load

1 TTL gate

Output Load Capacitance, CL

(including jig capacitance)

30

100

pF

Input Rise and Fall Times

≤10

ns

Input Pulse Levels

0.0–3.0 0.45–2.4 V

Input timing measurement

reference levels

1.5 0.8, 2.0 V

Output timing measurement

reference levels

1.5

0.8, 2.0 V

Am28F010A

23

Share Link: