SST29LE010-200-4C-NN Просмотр технического описания (PDF) - Silicon Storage Technology

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SST29LE010-200-4C-NN

1 Mbit (128K x8) Page-Write EEPROM

Silicon Storage Technology 

Data Sheet

1 Mbit Page-Write EEPROM

SST29EE010 / SST29VE010

VIHT

VILT

INPUT

VHT

VLT

REFERENCE POINTS

VHT

VLT

OUTPUT

1061 F13.0

AC test inputs are driven at VIHT (2.4V) for a logic “1” and VILT (0.4 V) for a logic “0”. Measurement reference points for

inputs and outputs are VHT (2.0 V) and VLT (0.8 V). Input rise and fall times (10% ↔ 90%) are <10 ns.

FIGURE 13: AC INPUT/OUTPUT REFERENCE WAVEFORMS

Note: VHT - VHIGH Test

VLT - VLOW Test

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

TO DUT

TO TESTER

CL

RL LOW

FIGURE 14: A TEST LOAD EXAMPLE

VDD

RL HIGH

1061 F14.0

©2005 Silicon Storage Technology, Inc.

18

S71061-11-000

9/05

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