DS2502S/R Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated

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производитель

DS2502S/R

1 kbit Add-Only Memory

Dallas Semiconductor -> Maxim Integrated 

ABSOLUTE MAXIMUM RATINGS*

Voltage on any Pin Relative to Ground

Operating Temperature

Storage Temperature

Soldering Temperature

-0.5V to +12.0V

-40°C to +85°C

-55°C to +125°C

260°C for 10 seconds

DS2502

* This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods of time may affect reliability.

DC ELECTRICAL CHARACTERISTICS (VPUP=2.8V to 6.0V; -40°C to +85°C)

PARAMETER

SYMBOL MIN TYP MAX UNITS NOTES

Logic 1

VIH

2.2

V

1, 6

Logic 0

VIL

-0.3

+0.8

V

1, 11

Output Logic Low @ 4 mA

VOL

0.4

V

1

Output Logic High

VOH

VPUP

6.0

V

1, 2

Input Load Current

IL

5

μA

3

Operating Charge

QOP

30

nC

7, 8

Programming Voltage @ 10 mA

VPP

11.5

12.0

V

CAPACITANCE

PARAMETER

Data (1-Wire)

SYMBOL

CIN/OUT

MIN

TYP

MAX

800

(tA =25°C)

UNITS NOTES

pF

9

AC ELECTRICAL CHARACTERISTICS (VPUP=2.8V to 6.0V; -40°C to +85°C)

PARAMETER

SYMBOL MIN TYP MAX UNITS NOTES

Time Slot

tSLOT

60

120

µs

Write 1 Low Time

tLOW1

1

15

µs

Write 0 Low Time

tLOW0

60

120

µs

Read Data Valid

tRDV

exactly 15

µs

Release Time

tRELEASE

0

15

45

µs

Read Data Setup

tSU

1

µs

5

Recovery Time

tREC

1

µs

Reset Time High

tRSTH

480

µs

4

Reset Time Low

tRSTL

480

µs

Presence Detect High

tPDH

15

60

µs

Presence Detect Low

tPDL

60

240

µs

Delay to Program

tDP

5

ms

10

Delay to Verify

tDV

5

µs

10

Program Pulse Width

tPP

480

5000

µs

10, 12

Program Voltage Rise Time

tRP

0.5

5.0

µs

10

Program Voltage Fall Time

tFP

0.5

5.0

µs

10

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