Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
2SK4017
Min Typ. Max Unit
—
—
±10
μA
—
— 100 μA
60
—
—
V
1.3
—
2.5
V
— 0.09 0.15
Ω
— 0.07 0.10
3.0 6.0
—
S
— 730 —
—
60
—
pF
—
95
—
—
10
—
Turn−on time
ton
Switching time
Fall time
tf
—
20
—
ns
—
4
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
toff
Qg
Qgs
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
Qgd
—
35
—
—
15
—
—
11
—
nC
—
4
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs
Min Typ. Max Unit
—
—
5
A
—
—
20
A
—
—
−1.7
V
—
34
—
ns
—
28
—
μC
Marking
K4017
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20