2SK3812 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3812 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
Pulsed
5
4
VGS = 4.5 V
3
10 V
2
1
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
tr
td(off)
td(on)
tf
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
10
100
ID - Drain Current - A
1000
1000
100
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
4.5 V
0V
1
0.1
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK3812
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
Coss
1000
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
ID = 110 A
50
VDD = 48 V
10
30 V
40
12 V
8
30
6
VGS
20
4
10
0
0
VDS
2
50 100 150 200 250
QG - Gate Charge - nC
0
300
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D16738EJ1V0DS
5
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