BFG67W Просмотр технического описания (PDF) - Philips Electronics
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BFG67W Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
handbook, full pagewidth
135 o
0.5
0.2
unstable
region
180 o 0
0.2
0.5
90 o
stability
circle
1
2
45 o
Fmin = 0.95 dB
5
Γopt
1
2
5
1.0
0.8
0.6
0.4
0.2
0o 0
F = 1.5 dB
0.2
5
F = 2 dB
0.5
135 o
f = 500 MHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω.
F = 3 dB
1
90 o
2
45 o
MLB990
1.0
Fig.13 Common emitter noise figure circles; typical values.
handbook, full pagewidth
stability
circle
90 o
1
135 o
0.5
Fmin = 1.30 dB
0.2
Γopt
180 o 0
0.2
0.5
1
2
unstable
region
0.2
0.5
135 o
F = 2 dB
F = 3 dB
F = 4 dB
1
f = 1 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω.
90 o
2
45 o
5
5
1.0
0.8
0.6
0.4
0.2
0o 0
5
2
45 o
MLB991
1.0
Fig.14 Common emitter noise figure circles; typical values.
August 1995
8
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