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BFG67W Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BFG67W
NPN 8 GHz wideband transistor
Philips Electronics
BFG67W Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
30
handbook, halfpage
gain
(dB)
20
MSG
G
UM
10
MLB986
G
max
0
0
10
20
30
IC (mA)
f = 1 GHz; V
CE
= 8 V.
Fig.7 Gain as a function of collector current;
typical values.
50
hand
g
bo
a
o
in
k, halfpage
(dB)
40
G
UM
30
MSG
20
10
0
10
10
2
MLB987
G
max
10
3
10
4
f (MHz)
I
C
= 5 mA; V
CE
= 8 V.
Fig.8 Gain as a function of frequency;
typical values.
50
hand
g
bo
a
o
in
k, halfpage
(dB)
40
G
UM
MSG
30
20
10
0
10
10
2
MLB988
G
max
10
3
10
4
f (MHz)
50
hand
g
bo
a
o
in
k, halfpage
(dB)
40
G
UM
MSG
30
20
10
0
10
10
2
MLB989
G
max
10
3
10
4
f (MHz)
I
C
= 15 mA; V
CE
= 8 V.
Fig.9 Gain as a function of frequency;
typical values.
August 1995
I
C
= 30 mA; V
CE
= 8 V.
Fig.10 Gain as a function of frequency;
typical values.
6
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