BFG67W Просмотр технического описания (PDF) - Philips Electronics

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BFG67W

NPN 8 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 8 GHz wideband transistor

Product specification

BFG67W

BFG67W/X; BFG67W/XR

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

excellent reliability.

MARKING

TYPE NUMBER

BFG67W

BFG67W/X

BFG67W/XR

CODE

V2

V6

V7

APPLICATIONS

They are intended for wideband

applications in the GHz range such as

analog satellite television systems

and portable RF communication

equipment.

DESCRIPTION

NPN silicon planar epitaxial

transistors in plastic, 4-pin

dual-emitter SOT343 and SOT343R

packages.

PINNING

PIN

DESCRIPTION

BFG67W (see Fig.1)

1 collector

2 base

3 emitter

4 emitter

BFG67W/X (see Fig.1)

1 collector

2 emitter

3 base

4 emitter

BFG67W/XR (see Fig.2)

1 collector

2 emitter

3 base

4 emitter

fpage

4

3

1

Top view

2

MBK523

Fig.1 SOT343.

alfpage

3

4

2

Top view

1

MSB842

Fig.2 SOT343R.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

IC

Ptot

hFE

Cre

fT

GUM

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

DC current gain

feedback capacitance

transition frequency

maximum unilateral

power gain

F

noise figure

CONDITIONS

MIN. TYP. MAX. UNIT

open emitter

open base

− − 20 V

− − 10 V

− − 50 mA

up to Ts = 85 °C

−

IC = 15 mA; VCE = 5 V

60

IC = 0; VCE = 8 V; f = 1 MHz

−

IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 °C −

IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C −

− 500

100 −

0.5 −

7.5 −

15.5 −

mW

pF

GHz

dB

Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz

− 2.2 − dB

August 1995

2

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