BFG67W Просмотр технического описания (PDF) - Philips Electronics

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производитель

BFG67W

NPN 8 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 8 GHz wideband transistor

Product specification

BFG67W

BFG67W/X; BFG67W/XR

handbook, full pagewidth

90 o

1

135 o

0.5

0.2

3 GHz

180 o 0

0.2

0.5

1

0.2

1.0

2

45 o

0.8

0.6

0.4

5

0.2

2

5

0o 0

40 MHz

5

0.5

135 o

1

90 o

VCE = 8 V; IC = 15 mA; Zo = 50 Ω.

2

45 o

MLB993

1.0

Fig.16 Common emitter input reflection coefficient (s11); typical values.

handbook, full pagewidth

90o

135 o

45 o

40 MHz

180 o

3 GHz

0o

50 40 30 20 10

135 o

45 o

VCE = 8 V; IC = 15 mA.

90o

MLB994

Fig.17 Common emitter forward transmission coefficient (s21); typical values.

August 1995

10

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