BF862 Просмотр технического описания (PDF) - Philips Electronics
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BF862 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel junction FET
Preliminary specification
BF862
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
VGS
VGS (off)
IGSS
IDSS
gate-source breakdown voltage
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
drain-source current
IGS = −1 µA; VDS = 0
VDS = 0; IG = 1 mA
VDS = 8 V; ID = 1 µA
VGS = −15 V; VDS = 0
VGS = 0; VDS = 8 V
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
yfs
gos
Ciss
Crss
en
fT
common source forward transfer Tj = 25 °C
admittance
common source output
conductance
Tj = 25 °C
input capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
equivalent noise input voltage f = 100 kHz
transition frequency
MIN.
−20
−
−
−
10
TYP.
−
−
−0.7
−
−
MAX.
−
1
−
−1
25
UNIT
V
V
V
nA
mA
MIN. TYP. MAX. UNIT
30
40
−
mS
−
−
400 µS
−
10
−
pF
−
2.5 −
pF
−
0.8 −
nV/√Hz
−
640 −
MHz
1999 Jun 29
4
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