BF862 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BF862

N-channel junction FET

Philips Electronics 

Philips Semiconductors

N-channel junction FET

Preliminary specification

BF862

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

VDS

VDG

VGS

IDS

IG

Ptot

Tstg

Tj

PARAMETER

drain-source voltage

drain-gate voltage

gate-source voltage

drain-source current

forward gate current

total power dissipation

storage temperature

junction temperature

CONDITIONS

Ts ≤ 92 °C

MIN.

−

−

−

−

−

−

−65

−

MAX.

20

20

−20

40

10

225

+150

150

UNIT

V

V

V

mA

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to soldering point

Notes

1. Soldering point of the gate lead.

CONDITIONS

note 1

VALUE

260

UNIT

K/W

handboo2k,5h0alfpage

Ptot

(mW)

200

150

100

50

0

0

40

MGS298

80

120

160

Ts (°C)

Fig.2 Power derating curve.

1999 Jun 29

3

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