BF862 Просмотр технического описания (PDF) - Philips Electronics

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BF862

N-channel junction FET

Philips Electronics 

Philips Semiconductors

N-channel junction FET

Preliminary specification

BF862

FEATURES

• High transition frequency for excellent sensitivity in

AM car radios

• High transfer admittance.

APPLICATIONS

• Pre-amplifiers in AM car radios.

DESCRIPTION

Silicon N-channel symmetrical junction field-effect

transistor in a SOT23 package.

Drain and source are interchangeable.

PINNING SOT23

PIN

1

source

2

drain

3

gate

DESCRIPTION

handbook, halfpage

3

1

Top view

2

MSB003

Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL

VDS

VGS (off)

IDSS

Ptot

|yfs|

Tj

PARAMETER

drain-source voltage

gate-source cut-off voltage

drain-source current

total power dissipation

transfer admittance

junction temperature

CONDITIONS

Ts ≤ 92 °C

MIN.

−

−

10

−

30

−

TYP.

−

−0.7

−

−

40

−

MAX. UNIT

20

V

−

V

25

mA

225 mW

−

mS

150 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1999 Jun 29

2

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