2SK1296 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
производитель
2SK1296 Datasheet PDF : 7 Pages
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2SK1296
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
ID = 50 A
1.2
0.8
20 A
0.4
10 A
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2 Pulse Test
0.1
0.05
VGS = 4 V
0.02
0.01
0.005
2
10 V
5 10 20 50 100 200
Drain Current ID (A)
0.05
0.04
0.03
0.02
Static Drain to Source on State
Resistance vs. Temperature
ID = 20 A
5 A,10 A
VGS = 4 V
VGS = 10 V
20 A
5 A,10 A
0.01
0
–40
Pulse Test
0
40
80 120 160
Case Temperature TC (°C)
Forward Transfer Admittance
vs. Drain Current
50
–25°C
TC = 25°C
20
75°C
10
5
2
VDS = 10 V
1.0
Pulse Test
0.5 1.0 2
5 10 20 50
Drain Current ID (A)
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