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2SJ541 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ541
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ541 Datasheet PDF : 9 Pages
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2SJ541
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 50 A / µs
5
–0.1 –0.3
V
GS
= 0, Ta = 25 °C
–1 –3 –10 –20
Reverse Drain Current I
DR
(A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
1000
Ciss
300
Coss
100
Crss
30
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
0
0
V
DD
= –10 V
–25 V
–20
–50 V
–4
–40
V
DS
–60
–80
V
DD
= –50 V
–25 V
–10 V
V
GS
–100
I
D
= –15 A
0
8
16
Gate Charge
24 32
Qg (nc)
–8
–12
–16
–20
40
1000
500
Switching Characteristics
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, duty < 1 %
200
t
d(off)
100
tf
50
tr
20
t
d(on)
10
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20
Drain Current I
D
(A)
5
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