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Компоненты Описание
2SJ506S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ506S
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ506S Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
2SJ506(L), 2SJ506(S)
Reverse Drain Current vs.
Source to Drain Voltage
–20
Pulse Test
–5 V
–16
–10 V
–12
V
GS
= 0.5 V
–8
–4
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
0.5
Tc = 25
°
C
0.3
0.1
0.03
0.2
0.1
0.05
0.02
0.01
1
shot
Pulse
0.01
10
µ
100
µ
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 6.25
°
C/W, Tc = 25
°
C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
7
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