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2SJ506L Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ506L
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ506L Datasheet PDF : 10 Pages
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2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
•
Low on-resistance
R
DS(on)
= 0.065
Ω
typ. (at V
GS
= –10V, I
D
= –5A)
•
Low drive current
•
High speed switching
•
4V gate drive devices.
Outline
DPAK–2
D
G
S
4
4
12
3
12
3
1. Gate
2. Drain
3. Source
4. Drain
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