2SJ358 Просмотр технического описания (PDF) - NEC => Renesas Technology

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Компоненты Описание

производитель

2SJ358

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

NEC => Renesas Technology 

2SJ358

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

–10

Pulsed

–8

–6

–4.5 V –4.0 V

–3.5 V

–4

–3.0 V

–2

–2.5 V

VGS = –2.0 V

0

–1

–2

–3

–4

–5

VDS – Drain to Source Voltage – V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

10

VDS = –10 V

Pulsed

1

Ta = –25 ˚C

0.1

0.01

Ta = 0 ˚C

Ta = 25 ˚C

Ta = 75 ˚C

Ta = 150 ˚C

0.001

–0.0001 –0.001 –0.01

–0.1

–1

ID – Drain Current – A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

0.5

VGS = –10 V

Pulsed

0.4

Ta = 150 ˚C Ta = 75 ˚C

0.3

0.2

0.1

Ta = 25 ˚C Ta = 0 ˚C Ta = –25 ˚C

0

–0.001

–0.01

–0.1

–1

–10

ID – Drain Current – A

TRANSFER CHARACTERISTICS

–10 VDS = –10 V

Pulsed

–1

Ta = 150 ˚C

–0.1

–0.01

–0.001

–0.0001

–0.00001

Ta = –25 ˚C

Ta = 0 ˚C

Ta = 25 ˚C

Ta = 75 ˚C

–1

–2

–3

–4

VGS – Gate to Source Voltage – V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRINT

0.7 VGS = –4 V

Pulsed

0.6

Ta = 150 ˚C Ta = 75 ˚C

0.5

0.4

0.3

0.2

0.1

Ta = 25 ˚C Ta = 0 ˚C

Ta = –25 ˚C

0–0.01 –0.01

–0.1

–1

–10

ID – Drain Current – A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

0.6

Pulsed

0.4

ID = 3.0 A

0.2

ID = 1.5 A

0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20

VGS – Gate to Source Voltage – V

3

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