2SD849 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD849 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD849
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
·
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
固IN电C半H导AN体GE SEMICONDUTOR VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
UNIT
V
V
V
IC
Collector current
3
A
ICM
Collector current-peak
5
A
PT
Total power dissipation
TC=90℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
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