2SD1911 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SD1911

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1911

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0

VCE(sat) Collector-emitter saturation voltage IC=4.5A ; IB=1.2A

VBE(sat) Base-emitter saturation voltage

IC=4.5A ; IB=1.2A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

VF

Diode forward voltage

IF=5A

MIN TYP. MAX UNIT

600

V

5.0

V

1.5

V

10

µA

50

200

mA

8

25

2.0

V

2

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