D1589 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
D1589 Datasheet PDF : 3 Pages
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
CONDITIONS
IC=0.1A , IB=0
VCEsat Collector-emitter saturation voltage IC=3A IB=3mA
VBEsat Emitter-base saturation voltage
IC=3A IB=3mA
ICBO
Collector cut-off current
VCB=100V IE=0
hFE-1
DC current gain
IC=3A ; VCE=2V
hFE-2
DC current gain
IC=5A ; VCE=2V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A ;IB1=3mA
IB2=-3mA; VCC≈50V
RL=16.7Ω
hFE Classifications
R
O
2000-5000
3000-7000
Y
5000-15000
www.jmnic.com
2SD1589
MIN
60
2000
500
TYP.
MAX
UNIT
V
1.5
V
2.0
V
1
μA
15000
1.0
μs
3.5
μs
1.2
μs
JMnic
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