2SD1291 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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2SD1291 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-base breakdown voltage
IE=500mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.8A
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE
DC current gain
IC=2.5A ; VCE=10V
ts
Storage time
tf
Fall time
IC=2.5A
ILeak=0.8A,LB=5μH
VF
Diode forward voltage
IF=-4A,IB=0
www.jmnic.com
2SD1291
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
50
μA
1
mA
4
12
4
8
μs
1
μs
2.2
V
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