D1414 Просмотр технического описания (PDF) - SavantIC Semiconductor
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D1414 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1414
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA
VBEsat Base-emitter saturation voltage
IC=3A ;IB=6mA
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=6mA
VCC=30V ,RL=10?
MIN TYP. MAX UNIT
80
V
1.5
V
2.0
V
20
µA
2.5 mA
2000
1000
0.2
µs
1.5
µs
0.6
µs
2
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