2SD1296 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1296 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1296
DESCRIPTION
·With TO-3PN package
·High DC current gain
·Low saturation voltage
APPLICATIONS
·For audio frequency power amplifier
and low speed high current switching
industrial use
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
MAX
150
100
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
PT
Total power dissipation
TC=25℃
Ta=25℃
100
W
3.0
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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