D1415 Просмотр технического описания (PDF) - Inchange Semiconductor
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D1415 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA
VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=14mA
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A ;IB=6mA
VCB=100V; IE=0
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=3V
hFE-2
DC current gain
IC=7A ; VCE=3V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=6mA
VCC=45V ,RL=15Ω
Product Specification
2SD1415
MIN TYP. MAX UNIT
100
V
0.9
1.5
V
1.2
2.0
V
1.5
2.5
V
100 μA
3.0 mA
2000
15000
1000
0.8
μs
3.0
μs
2.5
μs
2
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