D1411 Просмотр технического описания (PDF) - Inchange Semiconductor
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D1411 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.4A
ICBO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=100V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
fT
Transition frequency
VCE=4V;IC=1A
COB
Collector output capacitance
f=1MHz ; VCB=10V;IE=0
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=0.3A
VCC=30V ,RL=10Ω
hFE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SD1411
MIN TYP. MAX UNIT
80
V
0.25 0.5
V
0.9
1.4
V
5
μA
5
μA
70
240
30
10
MHz
250
pF
0.4
μs
2.5
μs
0.5
μs
2
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