2SD1295 Просмотр технического описания (PDF) - Panasonic Corporation
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Компоненты Описание
производитель
2SD1295 Datasheet PDF : 3 Pages
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Power Transistors
PC — Ta
32
TC=Ta
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
– 0.5
IC — VCE
TC=25˚C
IB=–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
0
0
–2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SB968
VCE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
– 0.03
TC=100˚C
25˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
VBE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
TC=–25˚C
100˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
1000
300
100
hFE — IC
VCE=–5V
TC=100˚C 25˚C
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
fT — IE
240
VCB=–5V
f=200MHz
200
TC=25˚C
160
120
80
40
0
10 30 100 300 1000 3000 10000
Emitter current IE (mA)
Cob — VCB
150
IE=0
f=1MHz
TC=25˚C
120
90
60
30
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
–120
–100
VCER — RBE
TC=25˚C
–80
–60
–40
–20
0
0.001 0.01
0.1
1
10
Base to emitter resistance RBE (kΩ)
1000
300
100
ICEO — Ta
VCE=–12V
30
10
3
1
0 20 40 60 80 100 120
Ambient temperature Ta (˚C)
2
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