2SC5755(2002) Просмотр технического описания (PDF) - Toshiba

Номер в каталоге

Компоненты Описание

производитель

2SC5755
(Rev.:2002)

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba 

2SC5755

rth – tw

1000

300

100

30

10

3

1

0.001 0.003 0.01 0.03

Curves should be applied in thermal limited area.

Single nonrepetitive pulse Ta = 25°C

Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)

0.1

0.3

1

3

10

30

100 300 1000

Pulse width tw (s)

Safe Operating Area

10

IC max (pulsed)*

3 IC max (continuous)

1

DC operation

(Ta = 25°C)

0.3

*: Single nonrepetitive pulse

Ta = 25°C

0.1 Note that the curves for 100 ms,

10 s and DC operation will be

different when the devices

aren’t mounted on an FR4

0.03

board (glass epoxy, 1.6 mm

thick, Cu area: 645 mm2).

These characteristic curves

must be derated linearly with

0.01 increase in temperature.

0.03 0.1 0.3

1

3

100 ms*

1 ms*

10 ms*

100 ms*

10 s*

10

30

100

Collector-emitter voltage VCE (V)

4

2002-07-22

Share Link: