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2SC5355 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC5355
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
Toshiba
2SC5355 Datasheet PDF : 4 Pages
1
2
3
4
5
Common emitter
Tc = 25°C
4
3
2
1
I
C
– V
CE
500
400
300
200
100
50
IB = 20 mA
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
2SC5355
5
Common emitter
VCE = 5 V
4
I
C
– V
BE
3
2
Tc = 100°C
1
25
−
40
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage V
BE
(V)
100
25
−
40
h
FE
– I
C
Tc = 100°C
10
Common emitter
VCE = 5 V
3
0.01
0.1
1
10
Collector current I
C
(A)
30
Common emitter
IC/IB = 5
10
V
CE (sat)
– I
C
Tc = 100°C
3
−
40
1
25
0.3
Safe Operating Area
10
IC max (pulse)*
3
IC max
(continuous)
1
1 ms*
100 µs*
10 µs*
10 ms*
100 ms*
DC operation
Tc = 25°C
0.3
0.1
*: Single nonrepetitive
pulse Tc = 25°C
0.03
Curves must be derated
linearly with increase in
temperature.
0.01
2
10
VCEO max
100
Collector-emitter voltage V
CE
(V)
1000
−
1000
0.01
0.1
1
10
Collector current I
C
(A)
3
2005-02-01
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