2SC5007-T1 Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SC5007-T1

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

Renesas Electronics 

2SC5007

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Noise Figure

SYMBOL

ICBO

IEBO

hFE

fT

Cre

|S21e|2

NF

MIN.

80

4.5

10.0

TYP.

7.0

0.45

12.0

1.4

MAX.

0.8

0.8

160

0.9

2.7

UNIT

µA

µA

GHz

pF

dB

dB

TEST CONDITIONS

VCB = 10 V, IE = 0

VEB = 1 V, IC = 0

VCE = 3 V, IC = 7 mA*1

VCE = 3 V, IC = 7 mA, f = 1 GHz

VCB = 3 V, IE = 0, f = 1 MHz*2

VCE = 3 V, IC = 7 mA, f = 1 GHz

VCE = 3 V, IC = 7 mA, f = 1 GHz

*1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %

*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance

bridge.

hFE Classification

RANK

Marking

hFE

FB

34

80 to 160

2

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