2SC4881 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4881 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4881
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 125mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 125mA
ICBO
Collector Cutoff Current
VCB= 50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 1V
hFE-2
DC Current Gain
IC= 2.5A ; VCE= 1V
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 4V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
RL= 12Ω,IB1= -IB2= 125mA,
VCC= 30V
MIN TYP. MAX UNIT
50
V
0.4
V
1.3
V
1
μA
1
μA
100
320
60
45
pF
100
MHz
0.1
μs
0.8
μs
0.1
μs
isc Website：www.iscsemi.cn
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