2SC4549 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC4549

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4549

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V(Min)

·High DC Current Gain-

: hFE= 100(Min)@ (VCE= 2V , IC= 1A)

·Low Saturation Voltage-

: VCE(sat)= 0.3V(Max)@ (IC= 3A, IB=B 0.15A)

APPLICATIONS

·Designed for use as a driver in DC/DC converters and

actuators.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current-Continuous

5.0

A

ICM

Collector Current-Pulse

10

A

IBB

Base Current-Continuous

2.5

A

Total Power Dissipation @TC=25℃

25

PT

W

Total Power Dissipation @Ta=25℃

2.0

TJ

Junction Temperature

Tstg

Storage Temperature

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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