2SC3890 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SC3890 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3890
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=3.0A; IB1=0.3A;IB2=-0.6A
VCC=200V ,RL=66@
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100 µA
100 µA
10
30
10
MHz
50
pF
1.0
µs
3.0
µs
0.5
µs
2
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