2SC1863 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC1863 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
ICBO
Collector cut-off current
VCB=150V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Product Specification
2SC1863
MIN TYP. MAX UNIT
100
V
7
V
0.5
V
1.0
V
100 μA
100 μA
20
15
2
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