2SB1373 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SB1373 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1373
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.8A
VBE
ICBO
IEBO
hFE-1
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-8A;VCE=-5V
VCB=-160V; IE=0
VEB=-5V; IC=0
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
fT
COB
DC current gain
Transition frequency
Collector output capacitance
IC=-8A ; VCE=-5V
IC=-0.5A ; VCE=-5V
IE=0; f=1MHz;VCB=-10V
MIN TYP. MAX UNIT
-160
V
-2.0
V
-1.8
V
-50
µA
-50
µA
20
60
200
20
15
MHz
400
pF
hFE-1 Classifications
Q
S
P
60-120 80-160 100-200
2
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