2SB1325 Просмотр технического описания (PDF) - KEXIN Industrial

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производитель

2SB1325

PNP Epitaxial Planar Silicon Transistors

KEXIN Industrial 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

DC current Gain

Gain bandwidth product

Output capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Base-emitter on state voltage

Diode forward voltage

Base-emitter resistance

2SB1325

Symbol

Testconditons

ICBO VCB = 20V , IE = 0

VCE = -2V , IC = -0.5A

hFE

VCE = -2V , IC = -3A

fT VCE = -2V , IC = -0.5A

Cob VCB = -10V , f = 1MHz

VCE(sat) IC = -3A , IB = -150mA

VBE(sat) VCE = -3V , IC = -150mA

V(BR)CBO IC = -10ìA , IE = 0

V(BR)CEO IC = -10ìA , RBE =

V(BR)CEO IC = -10mA , RBE =

VF IF=0.5A

RBE

Marking

Marking

BM

Transistors

Min Typ Max Unit

-1 ìA

70

50

300

MHz

60

pF

-0.25 -0.5 V

-1.5 V

-25

V

-25

V

-20

V

1.5 V

1.5

KÙ

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