2SB1155 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2SB1155 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1155
DESCRIPTION
·
·With TO-3PFa package
·Complement to type 2SD1706
·Low collector saturation voltage
·Satisfactory linearity of hFE
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
TC=25℃
PC
Collector power dissipation
Ta=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-130
-80
-7
-15
-25
80
3
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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