2SA2097(2002) Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

2SA2097
(Rev.:2002)

TOSHIBA Transistor Silicon PNP Epitaxial Type

Toshiba 

-6

-70 mA

-4

IC – VCE

Common emitter

-60 mA -50 mA

Tc = 25°C

-40 mA

-30 mA

-20 mA

-10 mA

-2

-5 mA

-2 mA

IB = -1 mA

0

0

0

-2

-4

-6

-8

Collector-emitter voltage VCE (V)

-3 Common emitter

IC/IB = 30

-1

-0.5

-0.3

VCE (sat) – IC

-0.1

-0.05

-0.03

25°C

Tc = 100°C

-0.01

-0.005

-0.003

-55°C

-0.001

-0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -10

Collector current IC (A)

2SA2097

3000 Common emitter

VCE = -2 V

1000

500

300

hFE – IC

25°C

100

-55°C

50

30

Tc = 100°C

10

5

3

1

-0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -10

Collector current IC (A)

-30 Common emitter

IC/IB = 30

-10

-5

-3

VBE (sat) – IC

-1 Tc = -55°C

-0.5

-0.3

25°C

-0.1

-0.05

-0.03

100°C

-0.01

-0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -10

Collector current IC (A)

-2

Common emitter

VCE = -2 V

IC – VBE

-1

Tc = 100°C

-55°C

25°C

0

0

-0.5

-1

-1.5

Base-emitter voltage VBE (V)

-10

Common emitter

-5 Tc = 25°C

-3

VCE – IB

-1

-0.5

-2 A

-0.3

IC = -2.5 A

-0.1

-0.05

-0.03

-1 A

-0.01

-0.001 -0.003 -0.01 -0.03 -0.1 -0.3

-1

-3

Base current IB (A)

3

2002-08-21

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