2SA1061Q Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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2SA1061Q Datasheet PDF : 3 Pages
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE
Base-emitter on voltage
IC=-4A;VCE=-5V
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-0.2A ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
DC current gain
IC=-4A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
hFE-2 Classifications
R
Q
40-80
60-120
P
100-200
www.jmnic.com
2SA1061
MIN TYP. MAX UNIT
-100
V
-2.0
V
-1.8
V
-50
μA
-50
μA
20
40
200
20
20
MHz
JMnic
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